New Method Enables Ferroelectric Switching in Aluminum Nitride Semiconductors

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May 12, 2026

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Scientists at Oak Ridge National Laboratory showed they can “write” ferroelectric regions into aluminum nitride by using a helium ion beam to create precise defects while keeping the crystal intact.

Source: https://www.azom.com/news.aspx?newsID=65426

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New Method Enables Ferroelectric Switching in Aluminum Nitride Semiconductors

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