Green Chem., 2025, Advance Article
DOI: 10.1039/D5GC02864G, Paper
DOI: 10.1039/D5GC02864G, Paper
Open Access
  This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Zixiao Wang, Yuanyuan Qiu, Zheju Cheng, Honglu Huang, Yang Sui, Xin Liu, Yijie Yang, Yue Lu, Huie Zhu, Qingqing Ji, Jiajun Yan
We study inverse vulcanization of a silicone side product into a S-rich network, which enhances the electrical performance of MoS2 transistors at high temperatures by filling S vacancies, offering a sustainable strategy to prevent device failure.
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We study inverse vulcanization of a silicone side product into a S-rich network, which enhances the electrical performance of MoS2 transistors at high temperatures by filling S vacancies, offering a sustainable strategy to prevent device failure.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
