[ASAP] Dual-Gate-Controlled Ferroelectric Field-Effect Transistor Based on Sr1.8Bi0.2Nb3O10 Perovskite Nanosheets for a Logic Memristor

Like
Liked

Date:

TOC Graphic

ACS Applied Electronic Materials
DOI: 10.1021/acsaelm.5c02594
ALT-Lab-Ad-1

Recent Articles