Research [ASAP] Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures LikeLiked Date: May 5, 2025 Less than 1 MinRead Views: 18 ACS Applied Electronic Materials DOI: 10.1021/acsaelm.5c00505 Source: http://dx.doi.org/10.1021/acsaelm.5c00505 Tags:Materials Industry FacebookTwitterLinkedinWhatsAppTelegramEmail ALT-Lab-Ad-1ALT-Lab-Ad-2ALT-Lab-Ad-3ALT-Lab-Ad-4ALT-Lab-Ad-5ALT-Lab-Ad-6ALT-Lab-Ad-7ALT-Lab-Ad-8ALT-Lab-Ad-9ALT-Lab-Ad-10ALT-Lab-Ad-11ALT-Lab-Ad-12ALT-Lab-Ad-13 Recent Articles Research April 11, 2026 Theatr Clwyd / Haworth Tompkins Built Environment April 11, 2026 The Case of the Missing Lead: Unlocking Earth’s 4.5-Billion-Year Secret Research April 11, 2026 AIMPLAS is Leading the VEGANCELIO Project to Transform Organic Waste into Vegan Leather and Cosmetic Microcapsules Research April 11, 2026 Reclaiming carbon fibres: a green catalytic route for low-temperature CFRP recycling Research April 11, 2026 Radical-mediated conversion of methane and water to light alcohols Research April 11, 2026 NASA Welcomes Record-Setting Artemis II Moonfarers Back to Earth Research April 11, 2026 Territorial resource efficiency sustainability assessment based on production-living-ecological space in Sichuan Province, Southwest of China Research April 11, 2026 Yutang Culture and Sports Center / GL Studio Built Environment April 11, 2026 Comparative effects of siderite, goethite, and hematite on nitrogen loss and nitrogenous gases release during municipal sludge aerobic composting Research April 11, 2026 Load more
