Research [ASAP] Nanoscale Origin of Strong Charge Carrier Scattering at Grain Boundaries in Orthorhombic SnSe Semiconductor Thin Films LikeLiked Date: April 11, 2025 Less than 1 MinRead Views: 29 ACS Applied Nano Materials DOI: 10.1021/acsanm.5c00686 Source: http://dx.doi.org/10.1021/acsanm.5c00686 Tags:Materials Industry FacebookTwitterLinkedinWhatsAppTelegramEmail ALT-Lab-Ad-1ALT-Lab-Ad-2ALT-Lab-Ad-3ALT-Lab-Ad-4ALT-Lab-Ad-5ALT-Lab-Ad-6ALT-Lab-Ad-7ALT-Lab-Ad-8ALT-Lab-Ad-9ALT-Lab-Ad-10ALT-Lab-Ad-11ALT-Lab-Ad-12ALT-Lab-Ad-13 Recent Articles Activated carbon–embedded free-standing glucomannan membrane for efficient dye removal Research February 25, 2026 Assessing environmental and policy dimensions of LEED adoption in ready-made garments of Bangladesh: Drivers, barriers, and strategies for sustainable industrial green transformation Waste Management February 24, 2026 Gen AI could transform packaging pricing: McKinsey Packaging February 24, 2026 Webb Maps Uranus’ Upper Atmosphere Research February 24, 2026 Get louder about sustainability progress, Crown leader says Packaging February 24, 2026 Technology Originally Developed for Space Missions Now Integral to Everyday Life Research February 24, 2026 Mapped: 85% of Babies in 2026 Will Be Born in Asia and Africa Finance & investments February 24, 2026 How the Circular Economy Can Help Solve Climate Change Environmental News February 24, 2026 How to Recycle and Reuse Garden Plug Trays Environmental News February 24, 2026 Hydrogen deal to power Lower Thames Crossing’s carbon-neutral construction push Environmental News February 24, 2026 Load more
