New modeling reveals how strain and high-k dielectrics mitigate phonon scattering in ultra-scaled MoS2 transistors, enhancing performance in nanometre devices.
Accelerating The Materials Transition
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Copyright @ 2025 ALT LABS
Date:
New modeling reveals how strain and high-k dielectrics mitigate phonon scattering in ultra-scaled MoS2 transistors, enhancing performance in nanometre devices.
Copyright @ 2025 ALT LABS